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- دانلود دیتاشیت
- دیتاشیت HUF75639S3ST
HUF75639S3ST دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | HUF75639S3ST |
|---|---|
| حجم فایل | 50.018 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 11 |
دانلود دیتاشیت HUF75639S3ST |
دانلود دیتاشیت |
|---|
سایر مستندات
HUF75639G3, P3, S3, S3S 10 pages
مشخصات فنی
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi HUF75639S3ST
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 200W
- Total Gate Charge (Qg@Vgs): 130nC@20V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 2000pF@25V
- Continuous Drain Current (Id): 56A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 25mΩ@10V,56A
- Package: TO-263AB
- Manufacturer: onsemi
- Series: UltraFET™
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263AB)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number: HUF75
- detail: N-Channel 100V 56A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263AB)